Simulation of the performance of a five-junction array for 780–950 GHz
نویسندگان
چکیده
The performance of a five-junction (Nb/AlOx/Nb) array is characterized in the frequency range of 780–950 GHz for different wiring and ground layers of the thin-film microstrip lines of the junction tuning inductance and the associated impedance transformer. Three kinds of thin films (i.e., Nb, Al and NbTiN) are taken for this investigation. The individual SIS junctions of the five-junction array have an area of 1 μm2 and a critical current density of 10 kA cm−2. The performance of parallel-connected twin junctions, which have the same junction parameters as those of the five-junction array, is also studied for comparison.
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